Memory maker MoSys Inc. announced that MoSys would once again be supplying an embedded 1T-SRAM solution for Nintendo's forthcoming console, codenamed Revolution. MoSys CEO and chief financial officer Mark Voll revealed for the first time a general target ship date for the still top-secret next-generation platform.

"During the quarter we announced that NEC Electronics will now use our 1T-SRAM embedded memory technologies on their advanced 90nm process, and that the initial designs to be incorporated in SoCs will be used in Nintendo's next-generation game console, codenamed Revolution," said Voll. "We are excited to be a participating member of the Nintendo team once again as Nintendo will roll out its successor game console to the GameCube in mid-2006."

"Instead of six transistors utilized in a traditional SRAM storage cell, each 1T-SRAM storage cell contains only one transistor and one capacitor, thus reducing the silicon required and lowering cost. This technology has been proven with the shipment of millions of devices," MoSys writes on the subject.

Via IGN